esd5311xz will semiconductor ltd. 1 revision 1.0, 2016/10/18 esd5311xz 1-line, bi-directional, ultra-low capacitance transient voltage suppressor descriptions the esd5311xz is an ultra-low capacitance tvs (transient voltage suppressor) designed to protect high speed data interfaces. it has been specifically designed to protect sensitive electronic components which are connected to data and transmission lines from over-stress caused by esd (electrostatic discharge). the esd5311xz incorporates one pair of ultra-low capacitance steering diodes plus a tvs diode. the esd5311xz may be used to provide esd protection up to 20kv (contact discharge) according to iec61000-4-2, and withstand peak pulse current up to 4a (8/20 s) according to iec61000-4-5. the esd5311xz is available in fbp0603-2l package. standard products are pb-free and halogen-free. features ? stand-off voltage: 5v max. ? transient protection for each line according to iec61000-4-2 (esd): 20kv (contact discharge) iec61000-4-4 (eft): 40a (5/50ns) iec61000-4-5 (surge): 4a (8/20 s) ? ultra-low capacitance: c j = 0.25pf typ. ? ultra-low leakage current: i r < 1na typ. ? low clamping voltage: v cl = 21v typ. @ i pp = 16a (tlp) ? small package applications ? usb 2.0 and usb 3.0 ? hdmi 1.3 and hdmi 1.4 ? sata and esata ? dvi ? ieee 1394 ? pci express ? portable electronics ? notebooks http//:www.sh-willsemi.com fbp0603-2l (bottom view) pin configuration d = device code * = month code marking (top view) order information device package shipping esd5311xz-2/tr fbp0603-2l 10000/tape&reel pin1 pin2
es d5311 x z will semiconductor ltd. 2 revision 1.0 , 201 6 / 10 / 18 absolute m aximum r ating s electrical characteristics (t a =25 o c, unless otherwise noted) notes: 1) tlp parameter: z 0 = 50, t p = 100ns, t r = 2n s, averaging wi ndow from 60ns to 80ns. r dyn is calculated from 4a to 16a. 2) contact discharge mode, according to iec61000 - 4 - 2. 3) non - repetitive current pulse, according to iec61000 - 4 - 5. parameter symbol rating unit peak pulse power ( t p = 8/20 s) p pk 84 w peak pulse current (t p = 8/20 s) i pp 4 a esd according to iec61000 - 4 - 2 air discharge v esd 2 0 k v esd according to iec61000 - 4 - 2 contact discharge 2 0 j unction t emper ature t j 1 25 o c operating temperature t op - 40 ~ 85 o c lead temperature t l 260 o c storage temperature t stg - 55~150 o c parameter symbol condition min. typ. max. unit rever se maximum working voltage v rwm 5.0 v rever se leakage current i r v rwm = 5 v <1 1 00 n a rever se breakdown voltage v br i t = 1ma 7.5 9 . 0 10 .0 v clamping voltage 1) v cl i pp = 16a, t p = 100ns 2 1 v dynamic resistance 1) r dyn 0.7 5 clamping voltage 2 ) v cl v esd = 8kv 2 1 v clamping voltage 3 ) v cl i pp = 1a, t p = 8/20s 1 4 v i pp = 4a , t p = 8/20s 21 v junction capacitance c j v r = 0v, f = 1mhz 0.25 0.4 0 pf
es d5311 x z will semiconductor ltd. 3 revision 1.0 , 201 6 / 10 / 18 typical characteristics (t a =25 o c, unless otherwise noted ) 8/20 s w aveform per iec61000 - 4 - 5 clamping voltage vs. peak pulse current non - repetitive peak pulse p ower vs. pulse time contact discharge current waveform per iec61000 - 4 - 2 capacitance vs. rever se voltage power derating vs. ambient t emperature 1 10 100 1000 1 10 100 1000 peak pulse power (w) pulse time ( ? s) 0 25 50 75 100 125 150 0 20 40 60 80 100 % of rated power t a - ambient temperature ( o c) 1 2 3 4 10 12 14 16 18 pulse waveform: t p = 8/20 ? s v c - clamping voltage (v) i pp - peak pulse current (a) t 60ns 30ns t r = 0.7~1ns 10 90 100 current (%) time (ns) -5 -4 -3 -2 -1 0 1 2 3 4 5 0.20 0.22 0.24 0.26 0.28 f = 1mhz v ac = 50mv c j - junction capacitance (pf) v r - reverse voltage (v) 0 0 100 20 90 50 10 t 2 t 1 front time: t 1 = 1.25 ? ? t = 8 ? s time to half-value: t 2 = 20 ? s peak pulse current (%) time ( ? s) t
es d5311 x z will semiconductor ltd. 4 revision 1.0 , 201 6 / 10 / 18 typical characteristics (t a =25 o c, unless otherwise noted ) esd clamping esd clamping ( +8kv contact discharge per iec61000 - 4 - 2) (+8kv contact discharge per iec61000 - 4 - 2) tlp measurement 20ns/div 10v/div 20ns/div 10v/div -25 -20 -15 -10 -5 0 5 10 15 20 25 -20 -16 -12 -8 -4 0 4 8 12 16 20 z 0 = 50 ? t r = 2ns t p = 100ns tlp current (a) tlp voltage (v)
esd5311xz will semiconductor ltd. 5 revision 1.0, 2016/10/18 package outline dimensions fbp0603-2l recommend land pattern (unit: mm) symbol dimensions in millimeter min. typ. max. a 0.275 - 0.340 d 0.570 - 0.670 a 0.190 ref. e 0.270 - 0.370 b 0.225 - 0.295 c 0.010 - 0.090 e 0.365 0.435 l1 0.125 - 0.195 l3 0.125 - 0.195 l2 0.030 ref. 0.32 0.64 0.20 0.42 0.22 notes: this recommended land pattern is for reference purposes only. please consult your manufacturing group to ensure your pcb design guidelines are met. e d top view bottom view side view l3 l2 e l2 a l1 b c a
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